SLVU2.5-8 Datasheet, PDF (2/4 Pages) UN Semiconducctor INC – Transient Voltage Suppressors for ESD Protection

Transient Voltage Suppressors for ESD Protection
SLVU2.5-8
Electrical Characteristics (@ 25℃ Unless Otherwise Specified )
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Reverse Working
Voltage
VRWM
--
--
--
2.5
V
Reverse Breakdown
Voltage
VBR
It=1mA
3.0
--
--
V
Reverse Leakage
Current
IR
VRWM =2.5V；T=25°C
--
--
0.01
μA
Positive Clamping
Voltage
VC1
IPP =1A，TP =8/20μS；
--
--
7
V
Capacitance
Between I/O And
CJ2
GND
 IR : <0.01uA，TC=25℃
 IR : <1.0uA，TC=125℃
 Note 1：I/O to any I/O
VR =0V，f=1MHz；
--
2
--
pF
Characteristic Curves
Fig1. 8/20μs Pulse Waveform
Fig2. ESD Pulse Waveform (according to IEC 61000-4-2)
100%
90%
10%
tr = 0.7~1ns
30ns
60ns
Time (ns)
UN Semiconductor Co., Ltd.
Revision December 18, 2013
2/4
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.