ESDXXV92D-C Datasheet, PDF (2/3 Pages) UN Semiconducctor INC – Transient Voltage Suppressors for ESD Protection

Transient Voltage Suppressors for ESD Protection
ESDXXV92D-C Series
Electrical Parameter
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IR
Maximum Reverse leakage Current @ VRWM
IT
Test Current
VBR
Breakdown Voltage @ IT
Bi-directional
VC VBRV_RW
R
I
IPP
IT
IR
IR
IT
IPP
V
VRW VBR VC
R
Electrical Characteristics (Ratings at 25 ºC ambient temperature unless otherwise specified VF=0.9v at IF=10mA )
Part Number
Min.
V
VBR
Typ.
V
Max.
V
IR
VRWM
IR
mA
V
μA
C
Vc
Typ. 0V bias
V
pF
ESD3.3V92D-C
5.1
6.0
6.8
1
3.3
1
14.1
25
ESD05V92D-C
5.6
6.7
7.8
1
5.0
1
18.6
15
*Surge current waveform per Figure 1.
1. VBR is measured with a pulse test current IT at an ambient temperature of 25 ºC.
120
100
80
60
40
20
0
0
Fig1
PULSE WAVEFORM
tr
TEST
Peak Value IPP _WAVEFORM
PARAMETERS
tr=8μs
td=20μs
td=t IPP/2
5
10 15 20
25 30
t - Time (μs)
220
200
180
160
140
120
100
80
60
40
20
0
0
Fig2
Power Derating Curve
Peak Pulse Power
8/20μs
Average Power
25
50
75 100 125 150
Lead Temperature – TL (ºC)
UN Semiconductor Co., Ltd.
Revision November 25, 2013
2/3
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.