ESDXXV52D-C Datasheet, PDF (2/3 Pages) UN Semiconducctor INC – Transient Voltage Suppressors for ESD Protection

Transient Voltage Suppressors for ESD Protection
ESDXXV52D-C Series
I-V Curve Characteristics
Symbol
IPP
VC
VRWM
IR
IT
VB
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse leakage Current @ VRWM
Test Current
Breakdown Voltage @ IT
Bi-directional
VC VBRV_RW
R
I
IPP
IT
IR
IR
IT
IPP
V
VRW VBR VC
R
Electrical Characteristics (@ 25℃ Unless Otherwise Specified )
Part Number
ESD3.3V52D-C
ESD05V52D-C
ESD08V52D-C
Device
Marking
CT
DT
GT
VRWM
(V)
(Max.)
3.3
5
8
VB
(V)
(Min.)
4
6
8.5
IT
(mA)
1
1
1
VC
@1A
(Max.)
7
9.8
17.5
VC
(Max.) (@A)
12
8
20
5
25
3
IR
(μA)
(Max.)
1
1
1
C
(pF)
(Typ.)
10
10
7
Characteristic Curves
Fig1. 8/20μs Pulse Waveform
120
TEST
100
tr
Peak Value IPP _WAVEFORM
PARAMETERS
tr=8μs
80
td=20μs
60
40
td=t IPP/2
20
0
0
5
10 15 20
25 30
t - Time (μs)
Fig2. ESD Pulse Waveform (according to IEC 61000-4-2)
100%
90%
10%
tr = 0.7~1ns
30ns
60ns
Time (ns)
UN Semiconductor Co., Ltd.
Revision January 06, 2014
2/3
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.