ESDXXV35T-4L Datasheet, PDF (2/3 Pages) UN Semiconducctor INC – Transient Voltage Suppressors Array for ESD Protection

Transient Voltage Suppressors Array for ESD Protection
ESDXXV35T-4L Series
Electrical Characteristics (@ 25℃ Unless Otherwise Specified )
Part Number
Device
Marking
VRWM
(V)
(Max.)
VB
(V)
(Min.)
IT
(mA)
VC
@1A
(Max.)
VC
(Max.) (@A)
ESD3.3V35T-4L
WB
3.3
4.5
1
8.0
15.3
4
IR
(μA)
(Max.)
5
C
(pF)
(Typ.)
40
ESD05V35T-4L
WE
5
6
1
9.8
18.5
3
2
30
ESD12V35T-4L
WH
12
13.3
1
17
21.0
2
1
25
Characteristic Curves
Fig1. 8/20μs Pulse Waveform
120
TEST
100
tr
Peak Value IPP _WAVEFORM
PARAMETERS
tr=8μs
80
td=20μs
60
40
td=t IPP/2
20
0
0
5
10
15
20
25 30
t - Time (μs)
Fig3. ESD Clamping (+8KV Contac per IEC61000-4-2)
Fig2. ESD Pulse Waveform (according to IEC 61000-4-2)
100%
90%
10%
tr = 0.7~1ns
30ns
60ns
Time (ns)
Fig4. ESD Clamping (-8KV Contac per IEC61000-4-2)
UN Semiconductor Co., Ltd.
Revision January 06, 2014
2/3
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.