ESDXXV32D-LC Datasheet, PDF (2/3 Pages) UN Semiconducctor INC – Transient Voltage Suppressors for ESD Protection

Transient Voltage Suppressors for ESD Protection
ESDXXV32D-LC Series
I-V Curve Characteristics
Symbol
IPP
VC
VRWM
IR
IT
VB
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse leakage Current @ VRWM
Test Current
Breakdown Voltage @ IT
Bi-directional
VC VBRV_RW
R
Low Capacitance
I
IPP
IT
IR
IT ^IR
V
VRW VBR VC
R
IPP
Electrical Characteristics (@ 25℃ Unless Otherwise Specified )
Part Number
ESD03V32D-LC
Device
Marking
CC
VRWM
(V)
(Max.)
3.0
VB
(V)
(Min.)
4.0
IT
(mA)
1
VC
@1A
(Max.)
5.15
ESD05V32D-LC
AC
5.0
6.0
1
9.80
ESD08V32D-LC
BC
8.0
8.5
1
13.40
ESD12V32D-LC
DC
12.0
13.3
1
19.00
ESD15V32D-LC
EC
15.0
16.7
1
24.00
ESD24V32D-LC
HC
24.0
26.7
1
43.00
VC
(Max.) (@A)
13.9
8
18.3
8
18.5
8
28.6
6
31.8
5
56.0
3
IR
(μA)
(Max.)
20
5
2
1
1
1
C
(pF)
(Typ.)
1.2
1.2
1.2
1.2
1.2
1.2
Characteristic Curves
Fig1. 8/20μs Pulse Waveform
120
TEST
100
tr
Peak Value IPP _WAVEFORM
PARAMETERS
tr=8μs
80
td=20μs
60
40
td=t IPP/2
20
0
0
5
10
15
20
25 30
t - Time (μs)
Fig2. ESD Pulse Waveform (according to IEC 61000-4-2)
100%
90%
10%
tr = 0.7~1ns
30ns
60ns
Time (ns)
UN Semiconductor Co., Ltd.
Revision January 06, 2014
2/3
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.