ESDXXV32D-LA Datasheet, PDF (2/3 Pages) UN Semiconducctor INC – Transient Voltage Suppressors for ESD Protection

Transient Voltage Suppressors for ESD Protection
ESDXXV32D-LA Series
Low Capacitance
I-V Curve Characteristics
Symbol
IPP
VC
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Uni-directional
I
IF
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse leakage Current @ VRWM
IT
Test Current
VB
Breakdown Voltage @ IT
VC VBRV_RW
V
R
IT ^IR
VF
IF
Forward Current
VF
Forward Voltage @IF
IPP
PPK
Peak Power Dissipation
C
Max Capacitance @VR=0V & f=1MHz
Electrical Characteristics (@ 25℃ Unless Otherwise Specified )
Part Number
ESD3.3V32D-LA
ESD05V32D-LA
ESD12V32D-LA
Device
Marking
S3
S5
SA
VRWM
(V)
(Max.)
3.3
5.0
12.0
VB
(V)
(Min.)
4.0
6.0
13.3
IT
(mA)
1
1
1
VC
@1A
(Max.)
5.15
9.80
19.00
VC
(Max.) (@A)
13.9
8
18.3
8
28.6
5
IR
(μA)
(Max.)
20
5
1
C
(pF)
(Typ.)
1.2
1.2
1.2
Characteristic Curves
Fig1. 8/20μs Pulse Waveform
120
TEST
100
tr
Peak Value IPP _WAVEFORM
PARAMETERS
tr=8μs
80
td=20μs
60
40
td=t IPP/2
20
0
0
5
10
15
20
25 30
t - Time (μs)
Fig2. ESD Pulse Waveform (according to IEC 61000-4-2)
100%
90%
10%
tr = 0.7~1ns
30ns
60ns
Time (ns)
UN Semiconductor Co., Ltd.
Revision January 06, 2014
2/3
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.