ESDXXV32D-C Datasheet, PDF (2/3 Pages) UN Semiconducctor INC – Transient Voltage Suppressors for ESD Protection

Transient Voltage Suppressors for ESD Protection
ESDXXV32D-C Series
I-V Curve Characteristics
Symbol
IPP
VC
VRWM
IR
IT
VB
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse leakage Current @ VRWM
Test Current
Breakdown Voltage @ IT
Bi-directional
VC VBRV_RW
R
I
IPP
IT
IR
IT ^IR
V
VRW VBR VC
R
IPP
Electrical Characteristics (@ 25℃ Unless Otherwise Specified )
Part Number
ESD03V32D-C
ESD05V32D-C
ESD08V32D-C
ESD12V32D-C
ESD15V32D-C
ESD18V32D-C
ESD24V32D-C
ESD36V32D-C
ESD48V32D-C
Device
Marking
2A
2B
2C
2D
2J
2K
2H
2N
2P
VRWM
(V)
(Max.)
3.3
5
8
12
15
18
24
36
48
VB
(V)
(Min.)
4.0
6.0
8.5
13.3
16.7
19.0
26.7
40
50
IT
(mA)
1
1
1
1
1
1
1
1
1
VC
@1A
(Max.)
7.5
9.8
13.4
19
24
28
43
60
65
Characteristic Curves
VC
(Max.) (@A)
16
25
17
24
20
18
25
13
30
6
35
8
52
6
75
4
85
3
IR
(μA)
(Max.)
200
10
5
1
1
1
1
1
1
C
(pF)
(Typ.)
350
260
120
110
100
90
75
35
25
Fig1. 8/20μs Pulse Waveform
120
TEST
100
tr
Peak Value IPP _WAVEFORM
PARAMETERS
tr=8μs
80
td=20μs
60
Fig2. ESD Pulse Waveform (according to IEC 61000-4-2)
100%
90%
40
td=t IPP/2
20
0
0
5
10
15
20
25 30
t - Time (μs)
10%
tr = 0.7~1ns
30ns
60ns
Time (ns)
UN Semiconductor Co., Ltd.
Revision January 06, 2014
2/3
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.