ESDXXV32D-A Datasheet, PDF (2/3 Pages) UN Semiconducctor INC – Transient Voltage Suppressors for ESD Protection

Transient Voltage Suppressors for ESD Protection
ESDXXV32D-A Series
I-V Curve Characteristics
Symbol
IPP
VC
VRWM
IR
IT
VB
IF
VF
PPK
C
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse leakage Current @ VRWM
Test Current
Breakdown Voltage @ IT
Forward Current
Forward Voltage @IF
Peak Power Dissipation
Max Capacitance @VR=0V & f=1MHz
Uni-directional
I
IF
VC VBRV_RW
R
IT ^IR
VF
IPP
Electrical Characteristics (@ 25℃ Unless Otherwise Specified )
Part Number
ESD3.3V32D-A
ESD05V32D-A
ESD08V32D-A
ESD12V32D-A
ESD15V32D-A
ESD24V32D-A
ESD36V32D-A
Device
Marking
03W
05W
08W
12W
15W
24W
36W
VRWM
(V)
(Max.)
3.3
5
8
12
15
24
36
VB
(V)
(Min.)
4.0
6.0
8.5
13.3
16.7
26.7
40.0
IT
(mA)
1
1
1
1
1
1
1
VC
@1A
(Max.)
6.5
9.8
13.4
19
24
43
60
VC
(Max.) (@A)
10.9
30
13.5
24
21
18
25.9
15
30
12
48
8
75
5
IR
(μA)
(Max.)
40
10
10
1
1
1
1
Characteristic Curves
V
C
(pF)
(Typ.)
500
350
150
120
100
80
30
Fig1. 8/20μs Pulse Waveform
120
TEST
100
tr
Peak Value IPP _WAVEFORM
PARAMETERS
tr=8μs
80
td=20μs
60
40
td=t IPP/2
20
0
0
5
10
15
20
25 30
t - Time (μs)
Fig2. ESD Pulse Waveform (according to IEC 61000-4-2)
100%
90%
10%
tr = 0.7~1ns
30ns
60ns
Time (ns)
UN Semiconductor Co., Ltd.
Revision January 06, 2014
2/3
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.