ESDXXV23T-2C Datasheet, PDF (2/3 Pages) UN Semiconducctor INC – Transient Voltage Suppressors Array for ESD Protection

Transient Voltage Suppressors Array for ESD Protection
ESDXXV23T-2C Series
Electrical Characteristics (@ 25℃ Unless Otherwise Specified )
Part Number
Device
Marking
ESD3.3V23T-2C
C03
ESD05V23T-2C
C05
ESD08V23T-2C
C08
ESD12V23T-2C
C12
ESD15V23T-2C
C15
ESD18V23T-2C
C18
ESD24V23T-2C
C24
ESD36V23T-2C
C36
Characteristic Curves
VRWM
(V)
(Max.)
3.3
5
8
12
15
18
24
36
VB
(V)
(Min.)
4.0
6.0
8.5
13.3
16.7
20.0
26.7
40.0
IT
(mA)
1
1
1
1
1
1
1
1
VC
@1A
(Max.)
7
9.8
13.4
19
24
29
43
60
VC
(Max.) (@A)
10.5
20
18
17
24
12
32
11
38
10
45
9
52
7
75
5
IR
(μA)
(Max.)
40
10
1
1
1
1
1
1
C
(pF)
(Typ.)
220
150
75
65
60
55
40
15
Fig1. 8/20μs Pulse Waveform
120
TEST
100
tr
Peak Value IPP _WAVEFORM
PARAMETERS
tr=8μs
80
td=20μs
60
Fig2. ESD Pulse Waveform (according to IEC 61000-4-2)
100%
90%
40
td=t IPP/2
20
0
0
5
10
15
20
25 30
t - Time (μs)
Fig3. ESD Clamping (+8KV Contac per IEC61000-4-2)
10%
tr = 0.7~1ns
30ns
60ns
Time (ns)
Fig4. ESD Clamping (-8KV Contac per IEC61000-4-2)
UN Semiconductor Co., Ltd.
Revision January 06, 2014
2/3
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.