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ESDXXV14T-2C Datasheet, PDF (2/3 Pages) UN Semiconducctor INC – Transient Voltage Suppressors Array for ESD Protection
Transient Voltage Suppressors Array for ESD Protection
ESDXXV14T-2C
Low Capacitance
Electrical Characteristics (@ 25℃ Unless Otherwise Specified )
Part Number
ESD05V14T-2C
ESD08V14T-2C
ESD12V14T-2C
ESD15V14T-2C
ESD18V14T-2C
ESD24V14T-2C
ESD36V14T-2C
Device
Marking
DT5
DT8
DTA
DTB
DTC
DTD
DTE
VRWM
(V)
(Max.)
5
8
12
15
18
24
36
VB
(V)
(Min.)
6
8.5
13.3
16.7
19.5
26.7
40.0
IT
(mA)
1
1
1
1
1
1
1
VC
@1A
(Max.)
9.8
13.4
29.0
25.0
32.0
40.0
55.0
VC
(Max.) (@A)
20
25
23
23
30
13
33
10
40
9
55
6
75
4
IR
(μA)
(Max.)
1
1
1
1
1
1
1
C
(pF)
(Typ.)
3
3
3
3
3
3
3
Characteristic Curves
Fig1. 8/20μs Pulse Waveform
120
TEST
100
tr
Peak Value IPP WAVEFORM
PARAMETERS
tr=8μs
80
td=20μs
60
40
td=t IPP/2
20
0
0
5
10
15
20
25 30
t - Time (μs)
Fig3. ESD Clamping (+8KV Contac per IEC61000-4-2)
Fig2. ESD Pulse Waveform (according to IEC 61000-4-2)
100%
90%
10%
tr = 0.7~1ns
30ns
60ns
Time (ns)
Fig4. ESD Clamping (-8KV Contac per IEC61000-4-2)
UN Semiconductor Co., Ltd.
Revision January 06, 2014
2/3
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.