ESDXXV08S-4L Datasheet, PDF (2/3 Pages) UN Semiconducctor INC – Transient Voltage Suppressors Array for ESD Protection

Transient Voltage Suppressors Array for ESD Protection
ESDXXV08S-4L Series
Low Capacitance
Electrical Characteristics (@ 25℃ Unless Otherwise Specified )
Part Number
ESD3.3V08S-4L
ESD05V08S-4L
ESD12V08S-4L
ESD15V08S-4L
Device
Marking
SRDA
3.3-4
SRDA
05-4
SRDA
12-4
SRDA
15-4
VRWM
(V)
(Max.)
3.3
5
12
15
VB
(V)
(Min.)
4
6
13.3
16.7
IT
(mA)
1
1
1
1
VC
@5A
(Max.)
6.5
VC
(Max.) (@A)
15.5
27
9.8
19
24
19
29
18
24
32
15
IR
(μA)
(Max.)
40
5
1
1
C
(pF)
(Typ.)
5
5
5
5
Characteristic Curves
Fig1. 8/20μs Pulse Waveform
120
TEST
100
tr
Peak Value IPP _WAVEFORM
PARAMETERS
tr=8μs
80
td=20μs
60
40
td=t IPP/2
20
0
0
5
10
15
20
25 30
t - Time (μs)
Fig2. ESD Pulse Waveform (according to IEC 61000-4-2)
100%
90%
10%
tr = 0.7~1ns
30ns
60ns
Time (ns)
Fig3. Power Derating Curve
110
100
90
80
70
60
50
40
30
20
10
0
0
25 50 75 100 125 150 175
Ambient Temperature – TA (ºC)
UN Semiconductor Co.,Ltd.
Revision January 06, 2014
2/3
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.