ESDXXV08S-4C Datasheet, PDF (2/3 Pages) UN Semiconducctor INC – Transient Voltage Suppressors Array for ESD Protection

Transient Voltage Suppressors Array for ESD Protection
ESDXXV08S-4C Series
Electrical Characteristics (@ 25℃ Unless Otherwise Specified )
Part Number
ESD3.3V08S-4C
ESD05V08S-4C
ESD12V08S-4C
ESD15V08S-4C
ESD24V08S-4C
Device
Marking
SMDA
33C
SMDA
05C
SMDA
12C
SMDA
15C
SMDA
24C
VRWM
(V)
(Max.)
3.3
5.0
12.0
15.0
24.0
VB
(V)
(Min.)
4.0
6.0
13.3
16.7
26.7
IT
(mA)
1
1
1
1
1
VC
@5A
(Max.)
6.5
9.8
19.0
24.0
43.0
VC
(Max.) (@A)
10.9
5
13.5
5
25.9
5
30.0
5
49.0
5
IR
(μA)
(Max.)
75
5
1
1
1
C
(pF)
(Typ.)
450
300
100
80
50
Characteristic Curves
Fig1. 8/20μs Pulse Waveform
120
TEST
100
tr
Peak Value IPP _WAVEFORM
PARAMETERS
tr=8μs
80
td=20μs
60
40
td=t IPP/2
20
0
0
5
10
15
20
t - Time (μs)
Fig3. Power Derating Curve
25 30
Fig2. ESD Pulse Waveform (according to IEC 61000-4-2)
100%
90%
10%
tr = 0.7~1ns
30ns
60ns
Time (ns)
110
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75 100 125 150
Ambient Temperature – TA (ºC)
UN Semiconductor Co., Ltd.
Revision January 06, 2014
2/3
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.