ESDXXV88D-C Datasheet, PDF (1/3 Pages) UN Semiconducctor INC – Transient Voltage Suppressors for ESD Protection

Transient Voltage Suppressors for ESD Protection
ESDXXV88D-C
Description
The ESDXXV88D-C is ultra low capacitance TVS arrays
designed to protect high speed data interfaces. This series has
been specifically designed to protect sensitive components
which are connected to high-speed data and transmission lines
from over-voltage caused by ESD (electrostatic discharge),
CDE (Cable Discharge Events), and EFT (electrical fast
transients).
DFN-1006
Feature
Functional Diagram
u 100 Watts Peak Pulse Power per Line (tp=8/20μs)
u Protects one birectional I/O line
u Low clamping voltage
u Working voltages :3.3V, 5V
u Low leakage current
u IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
u IEC61000-4-4 (EFT) 40A (5/50ηs)
1
2
Applications
u Cell Phone Handsets and Accessories
u Microprocessor based equipment
u Personal Digital Assistants (PDA’s)
u Notebooks, Desktops, and Servers
u Portable Instrumentation
u Peripherals
u Pagers
Mechanical Characteristics
Mechanical Data
u DFN1006 (1.0x0.6x0.5mm) Package
u Molding Compound Flammability Rating : UL 94V-0
u Weight 0.5 Milligrams (Approximate)
u Quantity Per Reel : 5,000pcs
u Reel Size : 7 inch
u Lead Finish : Lead Free
Symbol
PPP
IPP
TJ
TSTG
TL
Parameter
Peak Pulse Power (tp=8/20μs waveform)
Peak Pulse Current (tp=8/20μs waveform)
Operating Junction Temperature Range
Storage Temperature Range
Soldering Temperature, t max = 10s
IEC61000-4-2 (ESD)
Air Discharge
Contact Discharge
Value
100
2.5
-55 to +125
-55 to +150
260
15
8
Units
W
A
ºC
ºC
ºC
KV
UN Semiconductor Co., Ltd.
Revision December 18, 2013
1/3
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.