5.0SMDJ Datasheet, PDF (1/7 Pages) UN Semiconducctor INC – Surface Mount Transient Voltage Suppressors

Surface Mount Transient Voltage Suppressors (TVS)
5.0SMDJ Series 11 To 440 V 5000W
Description
The 5.0SMDJ series is designed specifically to protect sensitive electronic
equipment from voltage transients induced by lightning and other transient
voltage events.
Features
u For surface mounted applications in order to optimize board space
u Low leakage
u Uni and Bidirectional unit
u Glass passivated junction
u Low inductance
u Excellent clamping capability
u 5000W Peak power capability at 10 × 1000µs waveform Repetition
rate (duty cycle):0.01%
u Fast response time: typically less than 1.0ps from 0 Volts to VBR min
u Typical IR less than 5μA above 25V.
u High Temperature soldering: 260°C/40 seconds at terminals
u Typical maximum temperature coefficient ΔVBR = 0.1% ×
VBR@25°C× ΔT
u Plastic package has Underwriters Laboratory Flammability 94V-0
u Matte tin lead–free Plated
u Halogen free and RoHS compliant
u Typical failure mode is short from over-specified voltage or current
u Whisker test is conducted based on JEDEC JESD201A per its table
4a and 4c
u IEC-61000-4-2 ESD 15kV(Air), 8kV (Contact)
u ESD protection of data lines in accordance with IEC 61000-4-2
(IEC801-2)
u EFT protection of data lines in accordance with IEC 61000-4-4
(IEC801-4)
Maximum Ratings (T_A=25℃ unless otherwise noted)
Uni-directional
Bi-directional
Functional Diagram
Cathode
Bi-directional
Uni-direction
Anode
Applications
TVS devices are ideal for the protection of I/O interfaces, VCC
bus and other vulnerable circuits used in Telecom, Computer,
Industrial and Consumer electronic applications.
Parameter
Peak Pulse Power Dissipation with a 10/1000µs waveform (Fig.1)(Note
1), (Note 2)
Peak Pulse Current with a 10/1000µs waveform.(Note1,Fig.3)
Symbol
PPPM
IPP
Power Dissipation on Infinite Heat Sink at TL=75°C
PM(AV)
Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 3)
IFSM
Maximum Instantaneous Forward Voltage at 25A for Unidirectional Only
(Note 4)
VF
Operating junction and Storage Temperature Range.
TJ , TSTG
Notes:
1. Non-repetitive current pulse, per Fig. 3 and derated above TA = 25°C per Fig. 2.
2. Mounted on 5.0mm x 5.0mm (0.03mm thick) Copper Pads to each terminal.
3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle = 4 pulses per minutes maximum.
4. VF < 3.5V for VBR < 200V and VF< 6.5V for VBR > 201V.
Value
5000
See Next Table
6.5
300
3.5/5.0
-55 to +150
Unit
Watts
Amps
Watt
Amps
Voltage
°C
Electrical Characteristics (T_A=25℃ unless otherwise noted)
UN Semiconductor Co., Ltd.
Revision October 18, 2013
1/7
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.