 English |
|
|
|
|
|
|
|
| UM2605 Datasheet, PDF (5/7 Pages) Unitpower Technology Limited – N-Ch and P-Ch Fast Switching MOSFETs | |||
| |||
| ◁ |
UM2605
N-Ch and P-Ch Fast Switching MOSFETs
P-Channel Electrical Characteristics (TJ=25 â, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
â³BVDSS/â³TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
â³VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=-250uA
Reference to 25â , ID=-1mA
VGS=-4.5V , ID=-2A
VGS=-2.5V , ID=-1.5A
VGS=-1.8V , ID=-1A
VGS=VDS , ID =-250uA
VDS=-16V , VGS=0V , TJ=25â
VDS=-16V , VGS=0V , TJ=55â
VGS=±8V , VDS=0V
VDS=-5V , ID=-2A
VDS=0V , VGS=0V , f=1MHz
VDS=-15V , VGS=-4.5V , ID=-2A
VDD=-15V , VGS=-4.5V , RG=3.3Ω
ID=-2A
VDS=-15V , VGS=0V , f=1MHz
Min.
-20
---
---
---
-0.3
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
-0.016
105
145
185
-0.5
3.97
---
---
---
6.3
13.1
5.6
0.72
1.45
4
25.6
26
12.4
332
48
42
Max.
---
---
125
170
220
-1
---
1
5
±100
---
26.2
7.8
1.0
2.0
8.0
46
52
24.8
465
67
59
Unit
V
V/â
mΩ
V
mV/â
uA
nA
S
Ω
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
Min. Typ. Max. Unit
VG=VD=0V , Force Current
---
---
-2.8
A
---
--- -11.2
A
VGS=0V , IS=-1A , TJ=25â
---
---
-1.2
V
---
23
---
nS
IF=-2A , dI/dt=100A/µs , TJ=25â ---
4.7
---
nC
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ⦠300us , duty cycle ⦠2%
3.The power dissipation is limited by 150â junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
5
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese