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| UM2601 Datasheet, PDF (3/7 Pages) Unitpower Technology Limited – N-Ch and P-Ch Fast Switching MOSFETs | |||
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UM2601
N-Ch and P-Ch Fast Switching MOSFETs
P-Channel Electrical Characteristics (TJ=25 â, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
â³BVDSS/â³TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
â³VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
gfs
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=-250uA
Reference to 25â , ID=-1mA
VGS=-4.5V , ID=-4A
VGS=-2.5V , ID=-1.5A
VGS=VDS , ID =-250uA
VDS=-16V , VGS=0V , TJ=25â
VDS=-16V , VGS=0V , TJ=55â
VGS=±12V , VDS=0V
VDS=-5V , ID=-4A
VDS=-15V , VGS=-4.5V , ID=-4A
VDD=-10V , VGS=-4.5V , RG=3.3Ω
ID=-4A
VDS=-15V , VGS=0V , f=1MHz
Min.
-20
---
---
---
-0.5
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
-0.014
40
58
-0.8
3.95
---
---
---
12
10
1.93
3.18
5.6
47.4
31.6
17.2
857
114
108
Max.
---
---
50
72
-1.2
---
1
5
±100
---
14.0
2.7
4.5
11.2
85
63
34.4
1200
160
151
Unit
V
V/â
mΩ
V
mV/â
uA
nA
S
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
Min. Typ. Max. Unit
VG=VD=0V , Force Current
---
---
-4.5
A
---
---
-23
A
VGS=0V , IS=-1A , TJ=25â
---
---
-1
V
--- 19.7 ---
nS
IF=-4A , dI/dt=100A/µs , TJ=25â ---
5.2
---
nC
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ⦠300us , duty cycle ⦠2%
3.The power dissipation is limited by 150â junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
3
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