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US0008 Datasheet, PDF (2/4 Pages) Unitpower Technology Limited – N-Ch 100V Fast Switching MOSFETs
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US0008
N-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
△VGS(th)
IDSS
IDSS
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Drain-Source Leakage Current
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25℃ , ID=1mA
VGS=10V , ID=1A
VGS=4.5V , ID=0.5A
VGS=VDS , ID =250uA
VDS=80V , VGS=0V , TJ=25℃
VDS=80V , VGS=0V , TJ=25℃
VGS=±20V , VDS=0V
VDS=5V , ID=1A
VDS=0V , VGS=0V , f=1MHz
VDS=80V , VGS=10V , ID=1A
VDD=50V , VGS=10V , RG=3.3Ω
ID=1A
VDS=15V , VGS=0V , f=1MHz
Min.
100
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1.0
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Typ.
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0.067
260
270
1.5
-4.2
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2.4
2.8
9.7
1.6
1.7
1.6
19
13.6
19
508
29
16.4
Max.
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310
320
2.5
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1
5
±100
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5.6
13.6
2.2
2.4
3.2
34
27
38
711
41
23
Unit
V
V/℃
mΩ
V
mV/℃
uA
uA
nA
S
Ω
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
Min.
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Typ.
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trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
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14
IF=1A , dI/dt=100A/µs , TJ=25℃ ---
9.3
\
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Max.
1.2
5
1.2
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Unit
A
A
V
nS
nC
2
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