UM9926 Datasheet, PDF (2/4 Pages) ShenZhen XinDeYi Electronics Co., Ltd. – N-Ch 20V Fast Switching MOSFETs

UM9926
N-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (T_J=25 ℃, unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ ^C Max Unit
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage
IGSS
ON CHARACTERISTICS ^b
Gate Threshold Voltage
V G S (th)
Drain-S ource On-S tate R esistance R DS(ON)
Forward Transconductance
g_FS
DYNAMIC CHARACTERISTICS ^c
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS ^c
Turn-On Delay Time
tD(ON)
R ise Time
tr
Turn-Off Delay Time
tD(O F F )
Fall Time
tf
VGS _=0V, ID =250uA
VDS =16V, VGS =0V
VGS ₌ 10V,VDS=0V
VDS =VGS, ID = 250uA
VGS =4.0V, ID= 6.5A
VGS =2.5V, ID⁼ 5A
VDS = 5.0V, ID= 6.5A
VDS =8V, VGS = 0V
f =1.0MHZ
VDD = 10V,
ID = 1A,
VGEN = 4.5V,
R L = 10 ohm
R GEN = 10 ohm
20
V
1 ^uA
10 uA
0.5 0.9 1.5 V
23 28 m ohm
30 ₃₈ m ohm
16
S
540
PF
160
PF
100
PF
15
ns
20
ns
36
ns
11
ns
Total Gate Charge
VDS =10V, ID =6.5A,VGS =4V
6.4
nC
Qg
VDS =10V, ID =6.5A,VGS =2.5V
4.6
nC
Gate-S ource Charge
Gate-Drain Charge
Qgs _{VDS =10V, ID = 6.5 A}
Qgd ^{VGS =4V}
1.1
nC
2.8
nC
P a ra meter
S ymbol Condition
Min Typ^C Max Unit
DRAIN-SOURCE DIODE CHARACTERISTICS ^b
Diode Forward Voltage
VSD VGS = 0V, Is =1.7A
0.72 1.2 V
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
2