English
Language : 

UM6301 Datasheet, PDF (2/7 Pages) ShenZhen XinDeYi Electronics Co., Ltd. – N-Ch and P-Ch Fast Switching MOSFETs
◁
UM6301
N-Ch and P-Ch Fast Switching MOSFETs
N-Channel Electrical Characteristics (TJ=25ć, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
ϦBVDSS˂ϦTJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
ϦVGS(th)
IDSS
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
ʳ Conditions
VGS=0V , ID=250uA
Reference to 25ć, ID=1mA
VGS=10V , ID=10A
VGS=4.5V , ID=8A
VGS=VDS , ID =250uA
VDS=30V , VGS=0V , TJ=25ć
VDS=30V , VGS=0V , TJ=55ć
VGSːf20V , VDS=0V
VDS=15V , ID=10A
VDS=24V , VGS=0V , f=1MHz
VDS=20V , VGS=4.5V , ID=10A
VDD=12V , VGS=10V , RG=3.3:
ID=5A
VDS=25V , VGS=0V , f=1MHz
Min. Typ.
60
---
--- 0.063
---
25
---
30
1.2 . ---
---
-5.24
---
---
---
---
---
---
---
21
---
3.2
--- 12.56
--- 3.24
---
6.31
---
8
--- 14.2
--- 24.4
---
4.6
--- 1378
---
86
---
64
Max.
---
---
30
38
2.5
---
1
5
f100
---
6.4
---
---
---
---
---
---
---
---
---
---
Unit
V
V/ć
m:
V
mV/ć
uA
nA
S
:
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
ʳ Conditions
VDD=25V , L=0.1mH , IAS=10A
Min. Typ. Max.
15.2
---
---
Unit
mJ
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
ʳ Conditions
VG=VD=0V , Force Current
VGS=0V , IS=5A , TJ=25ć
Min. Typ. Max. Unit
---
---
8
A
---
---
16
A
---
---
1.2
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width œ 300us , duty cycle œ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS==2222.6.A6A
4.The power dissipation is limited by 150ć junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
 ▷