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UM6008 Datasheet, PDF (2/4 Pages) Unitpower Technology Limited – N-Ch 60V Fast Switching MOSFETs
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UM6008
N-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
△VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
gfs
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25℃ , ID=1mA
VGS=10V , ID=3A
VGS=4.5V , ID=2A
VGS=VDS , ID =250uA
VDS=60V , VGS=0V , TJ=25℃
VDS=48V , VGS=0V , TJ=55℃
VGS=±20V , VDS=0V
VDS=5V , ID=2A
VDS=48V , VGS=4.5V , ID=2A
VDS=30V , VGS=10V , RG=3.3Ω,
ID=2A
VDS=15V , VGS=0V , f=1MHz
Min.
60
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1.2
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Typ.
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0.054
70
80
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-4.96
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13
5
1.68
1.9
1.6
7.2
25
14.4
511
38
25
Max.
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90
100
2.5
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1
5
±100
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7.0
2.4
2.7
3.2
13
50
28.8
715
53
35
Unit
V
V/℃
mΩ
V
mV/℃
uA
nA
S
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
Conditions
VDD=25V , L=0.1mH , IAS=5A
Min. Typ. Max. Unit
2.5
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mJ
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
Min.
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Typ.
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trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
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9.7
IF=2A , dI/dt=100A/µs , TJ=25℃ ---
5.8
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=11.2A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Max.
3
12
1.2
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Unit
A
A
V
nS
nC
2
 ▷