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| UM4953 Datasheet, PDF (2/4 Pages) ShenZhen XinDeYi Electronics Co., Ltd. – Dual P-Ch 30V Fast Switching MOSFETs | |||
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UM4953
Dual P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 â, unless otherwise noted)
Symbol
Parameter
Test Condition
Static
BVDSS
Drain-Source Breakdown
Voltage
VGS=0V , IDS=-250µA
IDSS
VGS(th)
IGSS
RDS(ON)
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance>
VDS=-24V , VGS=0V
VDS=VGS , IDS=-250µA
VGS=±25V , VDS=0V
VGS=-10V , IDS=-4.9A
VGS=-4.5V , IDS=-3.6A
VSD Diode Forward Voltage>
Dynamic=
ISD=-1.7A , VGS=0V
Qg
Qgs
Qgd
td(ON)
Tr
td(OFF)
Tf
Ciss
Coss
Crss
Total Gate Charge
VDS=-15V , IGS=-10V
Gate-Source Charge
Gate-Drain Charge
lD=-4.6A
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VDD=-15V , ID=-2A ,
VGEN=-10V , RG=6â¦
RL=7.5â¦
Input Capacitance
VGS=0V
Output Capacitance
VDS=-25V
Reverse Transfer Capacitance Frequency=1.0MHz
Notes
a : Pulse test ; pulse width â¤300µs, duty cycle ⤠2%
b : Guaranteed by design, not subject to production testing
UM4953
Min. Typ=. Max.
Unit
-30
V
-1
µA
-1 -1.5 -2
V
±100 nA
53
60
mâ¦
80
95
-0.7 -1.3
V
22.3 29
4.65
nC
2
10
18
15
20
ns
22
38
15
25
1260
340
pF
220
2
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