English
Language : 

UM4302 Datasheet, PDF (2/7 Pages) Unitpower Technology Limited – N-Ch and P-Ch Fast Switching MOSFETs
◁
UM4302
N-Ch and P-Ch Fast Switching MOSFETs
N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
△VGS(th)
IDSS
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25℃ , ID=1mA
VGS=10V , ID=8A
VGS=4.5V , ID=6A
VGS=VDS , ID =250uA
VDS=32V , VGS=0V , TJ=25℃
VDS=32V , VGS=0V , TJ=55℃
VGS=±20V , VDS=0V
VDS=5V , ID=8A
VDS=0V , VGS=0V , f=1MHz
VDS=20V , VGS=4.5V , ID=8A
VDD=12V , VGS=10V , RG=3.3Ω
ID=6A
VDS=15V , VGS=0V , f=1MHz
Min.
40
---
---
---
1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.034
12
16
1.5
-5.64
---
---
---
20
2.1
10.7
3.3
4.2
8.6
3.4
24.8
2.2
1314
120
88
Max.
---
---
15
20
2.5
---
1
5
±100
---
4.2
---
---
---
---
---
---
---
---
---
---
Unit
V
V/℃
mΩ
V
mV/℃
uA
nA
S
Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
Conditions
VDD=25V , L=0.1mH , IAS=20A
Min. Typ. Max. Unit
45
---
---
mJ
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
Min. Typ. Max. Unit
---
--- 11.6
A
---
---
23
A
---
---
1.2
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=25A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
 ▷