UI8014 Datasheet, PDF (2/4 Pages) Unitpower Technology Limited – N-Ch 80V Fast Switching MOSFETs

UI8014
N-Ch 80V Fast Switching MOSFETs
Electrical Characteristics (T_J=25 ℃, unless otherwise noted)
Symbol
Parameter
BV_DSS Drain-Source Breakdown Voltage
△BV_DSS/△T_J BV_DSS Temperature Coefficient
R_DS(ON) Static Drain-Source On-Resistance²
V_GS(th)
△V_GS(th)
Gate Threshold Voltage
V_GS(th) Temperature Coefficient
I_DSS
Drain-Source Leakage Current
I_GSS
gfs
R_g
Q_g
Q_gs
Q_gd
T_d(on)
T_r
T_d(off)
T_f
C_iss
C_oss
C_rss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
V_GS=0V , I_D=250uA
Reference to 25℃ , I_D=1mA
V_GS=10V , I_D=10A
V_GS=4.5V, I_D=8A
V_GS=V_DS , I_D =250uA
V_DS=64V , V_GS=0V , T_J=25℃
V_DS=64V , V_GS=0V , T_J=55℃
V_GS=±20V , V_DS=0V
V_DS=5V , I_D=10A
V_DS=0V , V_GS=0V , f=1MHz
V_DS=64V , V_GS=10V , I_D=10A
V_DD=40V , V_GS=10V , R_G=3.3Ω,
I_D=10A
V_DS=15V , V_GS=0V , f=1MHz
Min.
80
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1.2
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Typ.
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0.072
80
90
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-4.7
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14.7
2.8
18.6
3.9
3.2
5
25
21
7.6
1090
60
41
Max.
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100
115
2.5
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1
5
±100
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5.6
26
5.5
4.5
10
45
42
15.2
1526
84
57
Unit
V
V/℃
mΩ
mΩ
V
mV/℃
uA
nA
S
Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy⁵
Conditions
V_DD=50V , L=0.1mH , I_AS=12A
Min. Typ. Max. Unit
9.5
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mJ
Diode Characteristics
Symbol
I_S
I_SM
V_SD
t_rr
Q_rr
Parameter
Continuous Source Current^1,6
Pulsed Source Current^2,6
Diode Forward Voltage²
Reverse Recovery Time
Reverse Recovery Charge
Conditions
V_G=V_D=0V , Force Current
V_GS=0V , I_S=A , T_J=25℃
IF=10A , dI/dt=100A/µs , T_J=25℃
Min.
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Typ.
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18.6
17.7
Note :
1.The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is V_DD=50V,V_GS=10V,L=0.1mH,I_AS=17.6A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I_D and I_DM , in real applications , should be limited by total power dissipation.
Max.
11.8
25
1.2
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Unit
A
A
V
nS
nC
2