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UI01N65 Datasheet, PDF (2/4 Pages) Unitpower Technology Limited – N-Ch 650V Fast Switching MOSFETs
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UI01N65
機密
第2頁
2011-05-25 - 2 -
N-Ch 650V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
△VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
gfs
Forward Transconductance
Rg
Gate Resistance
Qg
Total Gate Charge (10V)
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Td(on)
Turn-On Delay Time
Tr
Rise Time
Td(off)
Turn-Off Delay Time
Tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25℃ , ID=1mA
VGS=10V , ID=0.3A
VGS=VDS , ID =250uA
VDS=520V , VGS=0V , TJ=25℃
VGS=±30V , VDS=0V
VDS=10V , ID=0.5A
VDS=0V , VGS=0V , f=1MHz
VDS=520V , VGS=10V , ID=1A
VDD=300V , VGS=10V , RG=10Ω,
ID=1A
VDS=25V , VGS=0V , F=1MHz
Min.
650
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2
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Typ.
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0.66
10.5
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-6.4
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1
4.9
6.03
1.95
2.3
4.4
18.4
7.2
22.4
175
17.8
4.3
Max.
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12
5
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2
±100
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9.8
8.4
2.7
3.2
8.8
33
29
45
245
25
6
Unit
V
V/℃
Ω
V
mV/℃
uA
nA
S
Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
Conditions
VDD=50V , L=79mH , IAS=1A
Min. Typ. Max. Unit
40
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mJ
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
IF=1A , dI/dt=100A/µs , TJ=25℃
Min.
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Typ.
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181
336
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=79mH,IAS=1.3A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Max.
1.2
2.4
1
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Unit
A
A
V
nS
nC
2
 ▷