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UI0008 Datasheet, PDF (2/4 Pages) Unitpower Technology Limited – N-Ch 100V Fast Switching MOSFETs
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UI0008
N-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
△VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25℃ , ID=1mA
VGS=10V , ID=5A
VGS=4.5V , ID=3A
VGS=VDS , ID =250uA
VDS=80V , VGS=0V , TJ=25℃
VDS=80V , VGS=0V , TJ=55℃
VGS=±20V , VDS=0V
VDS=5V , ID=3A
VDS=0V , VGS=0V , f=1MHz
VDS=80V , VGS=10V , ID=5A
VDD=50V , VGS=10V , RG=3.3Ω
ID=5A
VDS=15V , VGS=0V , f=1MHz
Min.
100
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1.0
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Typ. Max.
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0.0672 ---
260 310
270 320
1.5
2.5
-4.12 ---
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10
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100
--- ±100
5.4
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2.5
5
9.6 13.4
1.83 2.56
1.85 2.6
1.4
2.8
30.6 55
11.2 22
6
12
508 711
29
41
16.4 23
Unit
V
V/℃
mΩ
V
mV/℃
uA
nA
S
Ω
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
IF=5A , dI/dt=100A/µs , TJ=25℃
Min.
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Typ.
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20
19
Max.
5.4
11
1.2
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Unit
A
A
V
nS
nC
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
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