US3002 Datasheet, PDF (1/4 Pages) Unitpower Technology Limited – N-Ch 30V Fast Switching MOSFETs

US3002
N-Ch 30V Fast Switching MOSFETs
General Description
The US3002 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The US3002 meet the RoHS and Green Product
requirement with full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Product Summery
BVDSS
RDS(ON)
ID
30V
28mΩ
5A
Applications
z High Frequency Point-of-Load Synchronous s
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
SOT23 Pin Configuration
Absolute Maximum Ratings
Symbol
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
P_D@T_A=70℃
T_STG
T_J
Thermal Data
Symbol
R_θJA
R_θJA
R_θJC
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V¹
Continuous Drain Current, V_GS @ 10V¹
Pulsed Drain Current²
Total Power Dissipation³
Total Power Dissipation³
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Thermal Resistance Junction-ambient ¹
Thermal Resistance Junction-Ambient ¹ (t ≤10s)
Thermal Resistance Junction-Case¹
Rating
10s
Steady State
30
±20
5.8
5
4.6
4
25
1.32
1
0.84
0.64
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
℃
℃
Typ.
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---
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Max.
125
95
80
Unit
℃/W
℃/W
℃/W
Rev A.04 D071111
1