US2301 Datasheet, PDF (1/6 Pages) ShenZhen XinDeYi Electronics Co., Ltd. – P -Channel E nhancement Mode F ield E ffect Trans is tor

US2301
P-Ch 20V Fast Switching MOSFETs
General Description
Product Summery
The US2301 is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The US2301 meet the RoHS and Green Product
requirement with full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
BVDSS
-20V
RDS(ON)
110mȍ
ID
-2.5A
Applications
z Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
SOT23 Pin Configuration
D
2
Absolute Maximum Ratings
1
3
G
S
Symbol
V_DSS
V_GSS
I_D*
I_DM*
I_S*
T_J
T_STG
P_D*
R_θJA*
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continue Drain Current
Pulsed Drain Current
Diode continuous forward current
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
T_A=25°C
T_A=100°C
Rating
-20
±12
-2.5
-10
-1.5
150
-55 to 150
0.83
0.3
150
Unit
V
A
A
°C
W
°C/W
1