UID4N60 Datasheet, PDF (1/4 Pages) Unitpower Technology Limited – N-Ch 600V Fast Switching MOSFETs

UI(D)4N60
N-Ch 600V Fast Switching MOSFETs
General Description
The UI(D)4N60 is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The UI(D)4N60 meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
600V
RDS(ON)
2.25 Ω
ID
3.2A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
TO-251/TO-252 Pin Configuration
Absolute Maximum Ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GSS
E_AS
dv/dt
P_D
T_J1 T_STG
T_L
Drain-Source Voltage
Drain Current
–Continuous(T_C = 25℃)
–Continuous(T_C = 100℃)
Drain Current –Pulsed
(Note1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note2)
Peak Diode Recovery dv/dt
Power Dissipation (T_C = 25℃)
-Derate above 25℃
(Note3)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from
case for 5 seconds
Thermal Data
TO-251/TO-252
600
3.2
1.9
12.8
±30
63
4.5
57
0.45
-55 to + 150
300
Unites
V
A
A
A
V
mJ
V/ns
W
W/℃
℃
℃
Symbol
Rθ _JC
Rθ _JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ
Max Units
--
2.2
℃/W
--
50
℃/W
1