UM9636 Datasheet, PDF (3/7 Pages) Union Semiconductor, Inc. – High-Speed Dual SPDT Switch

UM9636
Electrical Characteristics
Symbol
Parameter
Test Conditions
DC Electrical Characteristics
V_ANALOG
Analog Signal
Range
I_CC
Quiescent Supply
Current
I_GND
Ground Current
I_IH
Input Leakage
Current, VIN High
I_IL
Input Leakage
Current, VIN Low
I_D(on)
Channel On
Leakage Current
I_D(off)
I_S(off)
V_IH
V_IL
R_ON
ΔR_ON
R_FLAT
OFF State
Leakage Current
（Note2）
Input High
Voltage
Input Low Voltage
On-Resistance
(Note3)
On Resistance
Match Between
Channels (Note3,4,5)
On Resistance
Flatness (Note3,4,6)
AC Electrical Characteristics
t_ON
Turn On Time
t_OFF
t_BBM
THD
Charge
Injection
O_IRR
Turn Off Time
Break Before
Make Time(Note 7)
Total Harmonic
Distortion
Q_INJ
Off Isolation
(Note 8)
X_TALK
Crosstalk
BW
-3 dB Bandwidth
V_IN = 0 V, or V+
V_AX = 1.65 V
V_AX = 0.5 V
V+ = 12 V,
V_D = VS 11 V/1 V
V+ = 12 V,
V_D = 1 V/11 V,
V_S = 11 V/1 V
V_D =11.3 V
I_S=1mA
V_D =11.3 V
I_S=1mA
V_D =0.7, 6.5, 11.3 V
I_S=1mA
R_L = 300 Ω, C_L = 35 pF
R_L = 300 Ω, C_L = 35 pF
R_L = 300 Ω,
C_L = 35 pF
Signal = 1 V_RMS,
20 Hz to 20 kHz,
R_L = 600 Ω
C_L = 1 nF, R_GEN = 0 Ω,
V_GEN = 0 V
R_L=50Ω, C_L = 5pF，
f = 10MHz
R_L=50Ω, C_L = 5pF，
f = 10MHz
R_L=50Ω,
V+ (V)
12
12
12
12
12
12
12
12
12
12
12
12
12
12
12
12
12
12
12
Temp
Limits (–40 to 85 °C)
Min
Typ
(Note1)
Max
Unit
Full
Room
Full
Room
Full
Full
Full
Room
Full
Room
Full
Room
Full
Full
Full
Room
Full
Room
Full
Room
Full
-0.5
-1
-0.1
-0.1
-1.0
-11.0
-11.0
1.65
0.01
-0.01
0.01
0.01
±0.01
±0.01
±0.01
83
2
33
12
V
0.5
1
μA
0.1 μA
0.1 μA
1.0
2.0
μA
11.0
15.0
μA
11.0
15.0
μA
V
0.5
V
110
125
Ω
4
6
Ω
45
50
Ω
Room
Full
Room
Full
Room
5
Full
2
Room
30
70
80
ns
15
55
65
ns
15
ns
0.01
%
Room
Room
Room
Room
23.5
pC
-58
dB
-67
dB
720
MHz
Capacitance
C_IN
Control Pin Input
Capacitance
F=1MHz
Room
3
pF
C_OFF
Switch Off
Capacitance
F=1MHz
12
Room
2.0
pF
C_ON
Switch On
Capacitance
F=1MHz
12
Room
7.7
pF
1:Typically values are at T_A=+25℃.
2. The high OFF State Leakage Current is because of pull down resistor
3: Guaranteed by design. Resistance measurements do not include test circuit or package resistance.
4: Parameter is characterized but not tested in production.
5: ΔR_ON = ︱R_{ON (S1A/S1B)} − R_ON(S2A/S2B) ︱measured at identical V_CC, temperature and voltage levels.
6: Flatness is defined as the difference between the maximum and minimum value of On Resistance over the specified range of
conditions.
7: Guaranteed by Design.
8: Off Isolation = 20 log10 [V_D/V_SA/SB].
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http://www.union-ic.com Rev.02 Sep.2013
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