UM5080_16 Datasheet, PDF (3/6 Pages) Union Semiconductor, Inc. – Low Capacitance Bidirectional Single Line TVS Protection Diode

UM5080
Electrical Characteristics
(T=25°C, Device for 5.0V Reverse Stand-off Voltage)
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse Stand-Off
Voltage
Reverse Breakdown
Voltage
V_RWM
V_BR
I_T=1mA
6.5
5
V
8.5 V
Reverse Leakage Current
I_R
V_RWM=5V, T=25°C
1
μA
Clamping Voltage
I_PP=5A, t_P=8/20μs
V_C
I_PP=11A, t_P=8/20μs
9.7
V
13.6
Junction Capacitance
Junction Capacitance
Reverse Dynamic
Resistance
Forward Dynamic
Resistance
C_J
C_J
R_DYN,REV
R_DYN,FWD
V_R=0V, f=1MHz
V_R=2.5V, f=1MHz
I_PP >2A
25 40 pF
20 30 pF
0.55
Ω
0.35
Typical Operating Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
Clamping Voltage vs. Peak Pulse Current
1
0.1
0.02
0.04 0.1
1
10
100
1000
Pulse Duration - tp(uS)
14
13
12
11
10
9
8
7
6
0
Waveform
parameters:
tr=8uS
td=20uS
2
4
6
8
10
12
Peak Pulse Current - Ipp(A)
Junction Capacitance vs. Reverse Voltage
30
25
20
15
10
5
0
0
1
2
3
4
5
Reverse Voltage (V)
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