UM5080T Datasheet, PDF (3/6 Pages) Union Semiconductor, Inc. – Low Capacitance Bidirectional Single Line TVS Protection Diode

UM5080T
Electrical Characteristics (T=25°C, Device for 5.0V Reverse Stand-off Voltage)
PARAMETER
Reverse Stand-Off
Voltage
Reverse Breakdown
Voltage
Reverse Leakage Current
Clamping Voltage
Junction Capacitance
Junction Capacitance
SYMBOL
CONDITIONS
MIN TYP MAX
V_RWM
5
V_BR
I_T = 1mA
6.5
8.5
I_R
V_RWM = 5V, T=25°C
I_PP = 5A, t_p = 8/20μS
V_C
I_PP =11A, t_p = 8/20μS
C_J
V_R = 0V, f = 1MHz
C_J
V_R = 2.5V, f = 1MHz
1
9.7
13.6
45 59
35 45
UNIT
V
V
μA
V
pF
pF
Typical Operating Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
Clamping Voltage vs. Peak Pulse Current
1
0.1
0.02
0.04 0.1
1
10
100
1000
Pulse Duration - tp(uS)
14
13
12
11
10
9
8
7
6
0
Waveform
parameters:
tr=8uS
td=20uS
2
4
6
8
10
12
Peak Pulse Current - Ipp(A)
Junction Capacitance vs. Reverse Voltage
50
45
40
35
30
0
1
2
3
4
5
Reverse Voltage (V)
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