UM5080 Datasheet, PDF (3/6 Pages) Union Semiconductor, Inc. – Low Capacitance Bidirectional Single Line TVS Protection Diode

UM5080
Electrical Characteristics (T=25°C, Device for 5.0V Reverse Stand-off Voltage)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP
Reverse Stand-Off
Voltage
Reverse Breakdown
Voltage
V_RWM
V_BR
I_T = 1mA
6.5
Reverse Leakage Current
I_R
V_RWM = 5V, T=25°C
Clamping Voltage
I_PP = 5A, t_p = 8/20μS
V_C
I_PP =11A, t_p = 8/20μS
Junction Capacitance
C_J
V_R = 0V, f = 1MHz
25
Junction Capacitance
C_J
V_R = 2.5V, f = 1MHz
20
Reverse dynamic resistance
Forward dynamic resistance
R_dyn,rev
R_dyn,fwd
I_PP >2A
0.55
0.35
MAX
5
8.5
1
9.7
13.6
40
30
UNIT
V
V
μA
V
pF
pF
Ω
Typical Operating Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
Clamping Voltage vs. Peak Pulse Current
1
0.1
0.02
0.04 0.1
1
10
100
1000
Pulse Duration - tp(uS)
14
13
12
11
10
9
8
7
6
0
Waveform
parameters:
tr=8uS
td=20uS
2
4
6
8
10
12
Peak Pulse Current - Ipp(A)
Junction Capacitance vs. Reverse Voltage
30
25
20
15
10
5
0
0
1
2
3
4
5
Reverse Voltage (V)
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http://www.union-ic.com Rev.08 Feb.2012
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