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| UM8516 Datasheet, PDF (2/5 Pages) Union Semiconductor, Inc. – 20V P-Channel Power MOSFET | |||
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UM8516
Electrical Characteristics
(TJ=25â, unless otherwise noted)
Symbol
Parameter
Test Condition
Min Typ
Off Characteristics
BVDSS
Drain to Source
Breakdown Voltage
VGS=0V, ID=-250μA
-20
IDSS
Zero Gate Voltage
Drain Current
VDS=-20V, VGS=0V
IGSS
Gate-to-Source
Leakage Current
VGS=±6V, VDS=0V
On Characteristics
RDS(ON)
VGS(TH)
gfs
Static
Drain-to-Source
On-Resistance
Gate Threshold
Voltage
Forward
Transconductance
Dynamic Characteristics
VGS=-4.5V, ID=-4.0A
VGS=-2.5V, ID=-4.0A
VDS= VGS , ID=-250μA
VDS=-10V, ID=-2.7A
52
60
-0.4 -0.6
9
Ciss
Input Capacitance
990
Coss Output Capacitance
VGS=0V, VDS=-15V,
92
f=1.0MHz
Crss
Reverse Transfer
Capacitance
15
Switching Characteristics
Qg(TH)
Threshold Gate
Charge
10.8
Qgs Gate-Source Charge
VDS=-10V, VGS=-4.5V,
ID=-4.2A
2.46
Qgd Gate-Drain Charge
2.41
td(on) Turn-on Delay Time
48
tr
Rise Time
VGS=-4.5V, VDS=-10V,
95
ID=-1A
td(off) Turn-off Delay Time
RL=10Ω, RG=2.8Ω
680
tf
Fall Time
250
Drain-Source Diode Characteristics and Maximum Ratings
VSD
Forward Diode
Voltage
VGS=0V, IS=-1A
-0.7
Max Unit
V
-1
μA
±10
μA
65
mΩ
75
-1
V
S
pF
nC
ns
-1.4
V
________________________________________________________________________
http://www.union-ic.com Rev.02 Mar.2014
2/5
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