UM8515_16 Datasheet, PDF (2/5 Pages) Union Semiconductor, Inc. – 20V P-Channel Power MOSFET

UM8515
Electrical Characteristics (T_J=25ºC, unless otherwise noted)
Symbol
Parameter
Test Condition
Min Typ Max Unit
Off Characteristics
BV_DSS
I_DSS
I_GSS
Drain to Source
Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate-to-Source
Leakage Current
On Characteristics
R_DS(ON)
V_GS(TH)
g_fs
Static
Drain-to-Source
On-Resistance
Gate Threshold
Voltage
Forward
Transconductance
Dynamic Characteristics
V_GS=0V, I_D=-250μA
V_DS=-20V, V_GS=0V
V_GS=±8V, V_DS=0V
V_GS=-4.5V, I_D=-2.8A
V_GS=-2.5V, I_D=-2A
V_DS= V_GS , I_D=-250μA
V_DS=-10V, I_D=-2.7A
-20
V
-1 μA
±100 nA
90
110
mΩ
110 150
-0.4 -0.6
-1
V
7.0
S
Ciss Input Capacitance
Coss Output Capacitance
Crss
Reverse Transfer
Capacitance
Switching Characteristics
V_GS=0V, V_DS=-15V,
f=1.0MHz
480
46
pF
10
Q_g(TOT)
Q_g(TH)
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Threshold Gate
Charge
Gate-Source
Charge
Gate-Drain Charge
Turn-on Delay
Time
Rise Time
Turn-off Delay
Time
Fall Time
V_DS=-6V, V_GS=-4.5V,
I_D=-2.8A
V_GS=-4.5V, V_DS=-6V,
R_L=6Ω, R_G=6Ω
7.2
2.2
nC
2.2
1.2
38
25
ns
43
5
Drain-Source Diode Characteristics and Maximum Ratings
V_SD
Forward Diode
Voltage
V_GS=0V, I_S=-1A
-0.7 -1.4 V
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