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| UM8515 Datasheet, PDF (2/5 Pages) Union Semiconductor, Inc. – 20V P-Channel Power MOSFET | |||
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UM8515
Electrical Characteristics (TJ=25â, Unless otherwise noted)
Symbol
Parameter
Test Condition
Min Typ
Off Characteristics
BVDSS
Drain to Source
Breakdown Voltage
VGS=0V, ID=-250μA
-20
IDSS
Zero Gate Voltage
Drain Current
IGSS
Gate-to-Source
Leakage Current
On Characteristics
RDS(ON)
VGS(TH)
gfs
Static
Drain-to-Source
On-Resistance
Gate Threshold
Voltage
Forward
Transconductance
Dynamic Characteristics
VDS=-20V, VGS=0V
VGS=±8V, VDS=0V
VGS=-4.5V, ID=-2.8A
VGS=-2.5V, ID=-2A
VDS= VGS , ID=-250μA
VDS=-10V, ID=-2.7A
90
110
-0.4 -0.6
7.0
Ciss
Input Capacitance
480
Coss Output Capacitance
VGS=0V, VDS=-15V,
46
f=1.0MHz
Crss
Reverse Transfer
Capacitance
10
Switching Characteristics
Qg(TOT) Total Gate Charge
7.2
Qg(TH)
Threshold Gate
Charge
2.2
VDS=-6V, VGS=-4.5V,
Qgs Gate-Source Charge
ID=-2.8A
2.2
Qgd Gate-Drain Charge
1.2
td(on) Turn-on Delay Time
38
tr
Rise Time
VGS=-4.5V, VDS=-6V,
25
td(off) Turn-off Delay Time
RL=6â¦,RG=6â¦
43
tf
Fall Time
5
Drain-Source Diode Characteristics and Maximum Ratings
VSD
Forward Diode
Voltage
VGS=0V, IS=-1A
-0.7
Max Unit
V
-1
μA
±100 nA
110
mâ¦
150
-1
V
S
pF
nC
ns
-1.4
V
________________________________________________________________________
http://www.union-ic.com Rev.02 Jan.2010
2/5
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