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| UM2362 Datasheet, PDF (2/5 Pages) Union Semiconductor, Inc. – 60V (D-S) Small Signal MOSFET | |||
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UM2362
Absolute Maximum Ratings (Tamb=25â)
Symbol
Parameter
VDSS
Drain-Source voltage
VGS
Gate-Source voltage
ID
Continuous Drain Current
PD
Power Dissipation
TJ
Junction Temperature
Tstg
Storage Temperature
Value
60
±20
115
200
+150
-55 to +150
Units
V
V
mA
mW
â
â
Electrical Characteristics (Tamb=25â, Unless otherwise noted)
Symbol
Parameter
Test Condition
Min Typ
Off Characteristics
BVDSS
Drain to Source
Breakdown Voltage
VGS=0V, ID=10μA
VGS=0V, ID=3mA
60
60
IDSS
Zero Gate Voltage
Drain Current
VDS=60V, VGS=0V
IGSS
Gate-to-Source
Leakage Current
VGS=±20V, VDS=0V
On Characteristics
Static
VGS=10V, ID=500mA
1.2
RDS(ON)* Drain-to-Source
On-Resistance
VGS=5V, ID=50mA
1.7
VGS(TH)*
Gate Threshold
Voltage
VDS= VGS , ID=250μA
1
ID(ON)*
Drain-to-Source On
Current
VGS=10V, VDS=7V
500
VDS(ON)*
Drain-to-Source On
Voltage
VGS=10V, ID=500mA
VGS=5V, ID=50mA
gfs*
Forward
Transconductance
VDS=10V, ID=200mA
80
Drain-Source Diode Characteristics and Maximum Ratings
VSD
Forward Diode
Voltage
VGS=0V, IS=115mA
*Pulse test: Pulse Widthâ¤300μs, Duty Cycleâ¤2%
Max Unit
V
1 μA
±100 nA
7.5
â¦
7.5
2.5 V
mA
3.75
V
0.375
mS
1.2 V
________________________________________________________________________
http://www.union-ic.com Rev.02 Jul.2012
2/5
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