UESD6V8S2B_15 Datasheet, PDF (1/6 Pages) Union Semiconductor, Inc. – Dual Line ESD Protection Diode Array

UESD6V8S2B
Dual Line ESD Protection Diode Array
UESD6V8S2B SOT523
General Description
The UESD6V8S2B of TVS diode array is designed to protect sensitive electronics from damage or
latch-up due to ESD and is for use in applications where board space is at a premium. It is
unidirectional device and may be used on lines where the signal polarities are above ground, each
device will protect up to two lines.
TVS diodes are solid-state devices feature large cross-sectional area junctions for conducting high
transient currents, specifically for transient suppression. It offers desirable characteristics for board
level protection including fast response time, low operating, low clamping voltage, and no device
degradation.
The UESD6V8S2B may be used to meet the immunity requirements of IEC 61000-4-2, ±15kV air,
±8kV contact discharge and MIL-STD-883 METHOD 3015, ±8kV HBM. The small package makes
them ideal for use in portable electronics such as cell phones, PDA’s, notebook computers, and digital
cameras.
Applications
 Cellular Handsets & Accessories
 Cordless Phones
 Personal Digital Assistants (PDA’s)
 Notebooks & Handhelds
 Portable Instrumentation
 Digital Cameras
 Peripherals
 MP3 Players
Features
 Transient Protection for Data & Power Lines
to IEC 61000-4-2 (ESD) ±15kV (Air), ±8kV
(Contact)
 MIL-STD-883 3015 (HBM) ±8 kV
 Protect Two I/O Lines
 Working Voltages: 5V
 Low Leakage Current
 Low Operating and Clamping Voltage
 Solid-State Silicon Avalanche Technology
Pin Configurations
Top View
M: Month Code
UESD6V8S2B
SOT523
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http://www.union-ic.com Rev.02 Nov.2014
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