UESD6V8S2B Datasheet, PDF (1/6 Pages) Union Semiconductor, Inc. – Dual Line ESD Protection Diode Array

UESD6V8S2B
Dual Line ESD Protection Diode Array
UESD6V8S2B SOT523
General Description
The UESD6V8S2B of TVS diode array is designed to protect sensitive electronics from damage or
latch-up due to ESD. For use in applications where board space is at a premium. It is unidirectional
device and may be used on lines where the signal polarities are above ground, each device will protect
up to two lines.
TVS diodes are solid-state devices feature large cross-sectional area junctions for conducting high
transient currents, specifically for transient suppression. It offers desirable characteristics for board
level protection including fast response time, low operating, low clamping voltage, and no device
degradation.
The UESD6V8S2B may be used to meet the immunity requirements of IEC 61000-4-2, ±15kV air,
±8kV contact discharge and MIL-STD-883 METHOD 3015, ±8 KV HBM. The small package makes
them ideal for use in portable electronics such as cell phones, PDA’s, notebook computers, and digital
cameras.
Applications
Cellular Handsets & Accessories
Cordless Phones
Personal Digital Assistants (PDA’s)
Notebooks & Handhelds
Portable Instrumentation
Digital Cameras
Peripherals
MP3 Players
Features
Transient protection for data & power lines to
IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
MIL-STD-883 3015 (HBM) ±8 kV
Protect two I/O lines
Working Voltages: 5V
Low Leakage current
Low operating and clamping voltage
Solid-state silicon avalanche technology
Pin Configurations
Top View
M: Monthly Code
UESD6V8S2B
SOT523
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http://www.union-ic.com Rev.01 September.2011
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