3N65Z_15 Datasheet, PDF (3/8 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

3N65Z
„ ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t_D(ON)
Turn-On Rise Time
Turn-Off Delay Time
t_R
t_D(OFF)
V_DD = 325V, I_D = 3.0A,
R_G = 25Ω (Note 1, 2)
Turn-Off Fall Time
t_F
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_G
Q_GS
Q_DD
V_DS= 520V,I_D= 3.0A,
V_GS= 10 V (Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V_SD
V_GS = 0 V, I_S = 3.0 A
Maximum Continuous Drain-Source Diode
Forward Current
I_S
Maximum Pulsed Drain-Source Diode
Forward Current
I_SM
Reverse Recovery Time
Reverse Recovery Charge
t_rr
V_GS = 0 V, I_S = 3.0 A,
Q_RR
dI_F/dt = 100A/μs (Note 1)
Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
2. Essentially independent of operating temperature.
Power MOSFET
MIN TYP MAX UNIT
10 30 ns
30 70 ns
20 50 ns
30 70 ns
10 13 nC
2.7
nC
4.9
nC
1.4 V
3.0 A
12 A
210
ns
1.2
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-746.A