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3N60Z_15 Datasheet, PDF (2/8 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET
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3N60Z
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
VDSS
VGSS
IAR
ID
IDM
EAS
EAR
dv/dt
600
V
±30
V
3.0
A
3.0
A
12
A
200
mJ
7.5
mJ
4.5
V/ns
Power Dissipation
PD
34
W
Junction Temperature
TJ
+150
℃
Operating Temperature
TOPR
-55 ~ +150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 64mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD ≤ 3.0A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
„ THERMAL DATA
PARAMETER
SYMBOL
RATING
Junction to Ambient
Junction to Case
θJA
62.5
θJC
3.68
„ ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250μA
600
V
Drain-Source Leakage Current
IDSS
VDS = 600V, VGS = 0V
10 μA
Forward
Gate-Source Leakage Current
Reverse
IGSS
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C
100 nA
-100 nA
0.6
V/℃
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS = VGS, ID = 250μA
2.0
4.0 V
Static Drain-Source On-State Resistance
RDS(ON) VGS = 10V, ID = 1.5A
2.8 3.6 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
350 450 pF
Output Capacitance
COSS
VDS = 25V, VGS = 0V, f = 1MHz
50 65 pF
Reverse Transfer Capacitance
CRSS
5.5 7.5 pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-744.A
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