CHU2277A Datasheet, PDF (5/8 Pages) United Monolithic Semiconductors – W-band Multifunction : Multiplier / MPA

W-band Multiplier/MPA
Typical Assembly and Bias Configuration
CHU2277a
µ-strip line
L_in
3
2
µ-strip line
1
8261A
12
11
10
L_out1
4
6
5
L_out2
7
8
9
µ-strip line
>= 120pF
>= 120pF
-V
+V
DC lines
This drawing shows an example of assembly and bias configuration. All the
transistors are internally self biased. An external capacitor is recommended for the
positive and negative supply voltages.
For the RF pads the equivalent wire bonding inductance (diameter=25µm) have to
be according to the following recommendation.
Port
IN (2)
OUT1 (5)
OUT2 (8)
Equivalent inductance
(nH)
L_in = 0.32
L_out1 = 0.32
L_out2 = 0.32
Wire length (mm)
(1)
0.4
0.4
0.4
(1) This value is the total length including the necessary loop from pad to
pad.
For a micro-strip configuration a hole in the substrate is necessary for chip
assembly.
Ref. DSCHU2277a6013 - 13 Jan 06
5/8
Specifications subject to change without notice
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