CHU3377 Datasheet, PDF (4/6 Pages) United Monolithic Semiconductors – W-band Multifunction: Multiplier / MPA

CHU3377
W-band Multiplier/MPA
Typical Assembly and Bias Configuration
-V
>= 47pF
DC lines
+V
>= 47pF
L_in
µ-strip line
L_out
µ-strip line
This drawing shows an example of assembly and bias configuration. All the transistors
are internally self biased. An external chip capacitor of at least 47pF is necessary for the
positive and negative supply voltages.
For the RF pads the equivalent wire bonding inductance (diameter=25µm) have to be
according to the following recommendation.
Pin name
Equivalent inductance
Wire length (1)
IN
OUT
L_in ≤ 0.3 nH
L_out ≤ 0.15 nH (2)
≤ 0.4 mm
0.2 mm (2)
(1) This value is the total length including the necessary loop from pad to pad.
(2) For longer wire length or higher inductance, an external compensation is
required to match 50Ω between OUT Pin and 0.15nH wire inductance plan. (For
example with a matching network on the substrate)
Chip backside must be RF grounded.
Ref.: DSCHU33777082 - 23 Mar 07
4/6
Specifications subject to change without notice
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