CHU2277_15 Datasheet, PDF (4/6 Pages) United Monolithic Semiconductors – W-band Multifunction Multiplier / MPA

CHU2277
W-band Multiplier/MPA
Typical Assembly and Bias Configuration
µ-strip line
L_in
3
µ-strip line
2
1
12
11
10
L_out1
4
6
5
L_out2
7
8
9
µ-strip line
>= 120pF
>= 120pF
-V
+V
DC lines
This drawing shows an example of assembly and bias configuration. All the
transistors are internally self biased. An external capacitor is recommended for
the positive and negative supply voltages.
For the RF pads the equivalent wire bonding inductance (diameter=25µm) have
to be according to the following recommendation.
Port
IN (2)
OUT1 (5)
OUT2 (8)
Equivalent inductance
(nH)
L_in = 0.32
L_out1 = 0.32
L_out2 = 0.32
Wire length (mm)
(1)
0.4
0.4
0.4
(1) This value is the total length including the necessary loop from pad to
pad.
For a micro-strip configuration a hole in the substrate is necessary for chip
assembly.
Ref. DSCHU22771074 -15-Mar.-01
4/6
Specifications subject to change without notice
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