CHS5104-QAG_15 Datasheet, PDF (4/12 Pages) United Monolithic Semiconductors – DC-4GHz Reflective SPDT

CHS5104-QAG
DC-4GHz Reflective SPDT
Device thermal performances
All the figures given in this section are obtained assuming that the QFN device is cooled
down only by conduction through the package thermal pad (no convection mode considered).
The temperature is monitored at the package back-side interface (Tcase) as shown below.
The system maximum temperature must be adjusted in order to guarantee that Tcase
remains below the maximum value specified in the next table. So, the PCB system must be
designed to comply with this requirement.
A derating must be applied on the dissipated power if the Tcase temperature can not be
maintained below the maximum temperature specified (see the curve Pdiss. Max) in order to
guarantee the nominal device life time (MTTF).
Ref. : DSCHS5104-QAG2335 - 30 Nov 12
4/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]