CHR3663-QEG_11 Datasheet, PDF (4/18 Pages) United Monolithic Semiconductors – 17-24GHz Integrated Down Converter

CHR3663-QEG
17–24GHz Down Converter
Device thermal performances
All the figures given in this section are obtained assuming that the QFN device is cooled
down only by conduction through the package thermal pad (no convection mode
considered).
The temperature is monitored at the package back-side interface (Tcase) as shown below.
The system maximum temperature must be adjusted in order to guarantee that Tcase
remains below than the maximum value specified in the next table. So, the system PCB must
be designed to comply with this requirement.
A derating must be applied on the dissipated power if the Tcase temperature can not be
maintained below than the maximum temperature specified in order to guarantee the nominal
device life time (MTTF) (see the curve Pdiss. Max).
DEVICE THERMAL SPECIFICATION : CHR3663-QEG
Recommanded max. junction temperature (Tj max)
:
143 °C
Junction temperature absolute maximum rating
:
175 °C
Max. continuous dissipated power @ Tcase= 85 °C :
=> Pdiss derating above Tcase⁽¹⁾= 85 °C :
Junction-Case thermal resistance (Rth J-C)⁽²⁾
:
Min. package back side operating temperature⁽³⁾
:
Max. package back side operating temperature⁽³⁾
:
1,71 W
29 mW/°C
<34 °C/W
-40 °C
85 °C
Min. storage temperature
:
-55 °C
Max. storage temperature
:
125 °C
(1) Derating at junction temperature constant = Tj max
(2) Rth J-C is calculated for a worst case where the hotter junction of the MMIC is considered.
(3) Tcase=Package back side temperature measured under the die-attach-pad (see the drawing below).
1,8
Tcase
1,6
1,4
1,2
1
0,8
0,6
Pdiss. Max. (W)
0,4
Example of QFN 16L 3x3
0,2
back-side view, temperature
reference point (Tcase) location.
0
-50
-25
0
25
50
75
100
125
Tcase (°C)
5.6
Ref. : DSCHR3663-QEG1192 - 11 Jul 11
4/18
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: [phone] - Fax: [phone]