CHR3894-QEG Datasheet, PDF (3/14 Pages) United Monolithic Semiconductors – 37-40GHz Integrated Down Converter

37-40GHz Integrated Down Converter
CHR3894-QEG
Absolute Maximum Ratings ⁽¹⁾
Tamb.= +25°C
Symbol
Parameter
Values
Unit
VD, VD1 Drain bias voltages
4.5V
V
IDt
Drain bias current
340
mA
VGL, VGX Gate bias voltages
-2 to +0.4
V
GC
P_RF
Gain Control voltage
Maximum peak input power overdrive ⁽²⁾
-2.5 to +0.8
+15
V
dBm
P_LO
Tj
Maximum LO input power
Junction temperature ⁽²⁾
+15
dBm
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +150
°C
(1) _{Operation of this device above anyone of these parameters may cause permanent}
damage.
(2) _{Duration < 1s.}
Typical Bias Conditions
Tamb.= +25°C
Symbol Pad N^o
VD1, VD 10, 11
ID1
10
VGL
9
VGX
12
GC
8
Parameter
DC drain voltages (LNA and LO-chain)
LNA drain current controlled with VGL
LNA DC gate voltage
Multiplier DC gate voltage
Gain control DC voltage
Values Unit
4
V
125
mA
-0.1
V
-0.9
V
-2 to 0.6 V
Ref. : DSCHR3894-QEG2201 -19 jul 12
3/14
Specifications subject to change without notice
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