CHR3763-QDG Datasheet, PDF (3/16 Pages) United Monolithic Semiconductors – 12-16GHz Integrated Down Converter

12-16GHz Integrated Down Converter
CHR3763-QDG
Absolute Maximum Ratings ⁽¹⁾
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vdx Drain bias voltage
3.5
V
Id
Drain bias current
120
mA
VG1,VG2 LNA gate bias voltages
-2 to +0.4
V
VG3 LO buffer gate bias voltage
-2 to +0.4
V
VG4 Mixer gate bias voltage
-2 to +0.4
V
P_RF Maximum peak input power overdrive ⁽²⁾
+15
dBm
P_LO Maximum LO input power
+10
dBm
Tj
Junction temperature
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) _{Operation of this device above anyone of these parameters may cause permanent}
damage.
(2) _{Duration < 1s.}
Typical Bias Conditions
Tamb.= +25°C
Symbol Pad N^o
VDx
13,15,18
Id
13,15,18
VG1
12
VG2
14
VG3
19
VG4
17
Parameter
DC drain voltages
Total drain current
1^st stage LNA DC gate voltage (14mA)
2^nd stage LNA DC gate voltage (31mA)
LO buffer DC gate voltage (35mA)
Mixer DC gate voltage
Values Unit
3
V
80
mA
-0.52
V
-0.46
V
-0.46
V
-1
V
Ref. : DSCHR3763-QDG3324 - 20 Nov 13
3/16
Specifications subject to change without notice
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