CHR1080A98F_15 Datasheet, PDF (3/12 Pages) United Monolithic Semiconductors – 71-86GHz Down-converter

71-86GHz Down-converter
CHR1080a98F
Absolute Maximum Ratings ⁽¹⁾
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4V
V
Idt
Drain bias current
240
mA
Vg
Gate bias voltage
Pin_LO Maximum LO peak input power overdrive ⁽²⁾
-3.0 to -1.4
+10
V
dBm
Tj
Junction temperature
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) _{Operation of this device above anyone of these parameters may cause permanent}
damage.
(2) _{Duration < 1s.}
Typical Bias Conditions
Tamb.= +25°C
Pad name
Pad N^o
Parameter
Typical Unit
Values
GRF
6
LNA DC gate voltage ⁽¹⁾
-2
V
DRF
7
LNA DC drain voltage (90mA)
3.5
V
GX
8
Mixer DC gate voltage
-2
V
DLO
10
LO Buffer DC drain voltage (85mA)
3.5
V
GLO
12
LO Buffer DC gate voltage
-2.2
V
5, 9, 11 Not connected
(1) _{LNA gate voltage could be adjusted between -3.0V and -1.4V to perform gain control}
Ref. : DSCHR1080a5093 - 03 Apr 15
3/12
Specifications subject to change without notice
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