CHA3512_15 Datasheet, PDF (3/10 Pages) United Monolithic Semiconductors – 6-18GHz Low Noise Digital Variable Amplifier

6-18GHz Digital Variable Amplifier
CHA3512
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Maximum Drain bias voltage ( Pads B, D)
+5
V
Id
Drain bias current with Vd=4.5V
300
mA
Vg
Gate bias voltage (Pads A,C)
-2 to +0.4
V
Vc
Attenuator bit & SPDT control voltage
-7 to +0.6
V
Pin
Maximum input power overdrive (2)
+20.0
dBm
Tch
Maximum channel temperature
+175
°C
Ta
Operating temperature range
-40 to +70
°C
Tstg
Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Thermal Resistance channel to ground paddle =123°C/ W for Tamb. = +70°C.
LNA Control interface
The attenuator state is controlled by 2 voltages. The SPDT switch is controlled by 2 voltages.
state
0
1
2
Theoretical
attenuation
(dB)
0 référence
20
Isolation
Voltage CONTROL
PAD
20A
20B
(V)
(V)
-5
0
0
-5
-5
0
Switch control
E
F
(V)
(V)
-5
0
-5
0
0
-5
Ref. : DSCHA3512-8144 - 23 May 08
3/10
Specifications subject to change without notice
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