CHA3396-QDG_15 Datasheet, PDF (3/16 Pages) United Monolithic Semiconductors – 27-33.5GHz Medium Power Amplifier

27-33.5GHz Medium Power Amplifier
CHA3396-QDG
Absolute Maximum Ratings ⁽¹⁾
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd Drain bias voltage
4.5V
V
Id
Drain bias quiescent current
200
mA
Vg Gate bias voltage
-2 to +0.4
V
Pin Maximum input power
Tj
Junction temperature ⁽²⁾
6
dBm
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) _{Operation of this device above anyone of these parameters may cause permanent}
damage.
(2) _{Thermal Resistance channel to ground paddle =100.9°C/W for Tamb. = +85°C with 4.0V &}
155mA.
Typical Bias Conditions
Tamb.= +25°C
Symbol Pad N^o
VG1
8
VG2
9
VG3
10
VD1
23
VD2
22
VD3
21
Parameter
DC Gate voltage 1^st stage
DC Gate voltage 2^nd stage
DC Gate voltage 3^rd stage
DC Drain voltage 1^st stage
DC Drain voltage 2^nd stage
DC Drain voltage 3^rd stage
Values Unit
-0.35
V
-0.35
V
-0.35
V
4.0
V
4.0
V
4.0
V
Ref. : DSCHA3396-QDG5260 -17 Sep 15
3/16
Specifications subject to change without notice
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